Texas Instruments (TI) has begun production of GaN-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas, Texas, TI will now internally ...

According to news agency Reuters, the German automotive supplier ZF intends to withdraw from a planned $3 billion SiC fab project with US chipmaker Wolfspeed.

Pfeiffer Vacuum, a member of the Busch Group, has a new name and refreshed logo, marking the evolution of the company into Pfeiffer Vacuum+Fab Solutions. The updated logo incorporates a stylistic ...

Ams Osram has announced its new OSLON UV 3535 for UV-C disinfection and treatment solutions, offering 115mW out of a single ...

The first Ams Osram products to take advantage of the new chip are the OSLON P1616 series of high-power LEDs in a compact 1.6mm x 1.6mm package — and the OSLON Black family, which offers various ...

According to market research firm TrendForce, Samsung Electronics has begun restructuring its business, with the semiconductor division deciding to withdraw from the mainstream LED business, due to ...

German automotive supplier ZF intends to withdraw from $3 billion SiC fab project, says Reuters According to news agency Reuters, the German automotive supplier ZF intends to withdraw from a planned ...

UK firm III-V Epi has announced that its director of epitaxy, Neil Gerrard, is amongst the expert contributors to a white ...

According to a report in Defense News, the Norwegian Ministry of Defence will co-develop a new GaN-based radar in partnership with Raytheon and Kongsberg Defence & Aerospace to boost the capabilities ...

Toray, with subsidiary company Tory Engineering, has now developed a material for fast laser transfers of InP and other optical semiconductors. They have also worked on a material to 'catch' ...

To meet the needs of industrial applications transitioning to higher power levels using increased DC link voltage, Infineon has released the first discrete SiC Schottky diode with a breakdown voltage ...